ABSTRACT:The invention relates to a method of manufacturinga semiconductor device in which a surface of a semiconductorregion consisting of silicon is provided at least partly witha silicon oxide-containing layer.According to the invention, the silicon region issubsequently subjected to a nitridation treatment in which azone consisting of a nitrogen-containing material is formedbetween the silicon oxide layer and the silicon region.The said zone plays an essential part in a furtherphase of the manufacture and/or in the manufactured semi-conductor device.
展开▼