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Thyristor with at least four layers of different leitfaehigkeittyps, in which the disconnection by short-circuiting of the of the control base layer adjacent contacted external emitter layer with the applied, to the outside, guided and contacted control base layer is
Thyristor with at least four layers of different leitfaehigkeittyps, in which the disconnection by short-circuiting of the of the control base layer adjacent contacted external emitter layer with the applied, to the outside, guided and contacted control base layer is