首页> 外国专利> Diamond compact supported, apparatus and process for the preparation of aperfeicoados compact chain aperfeicoada for stretching of wire and aperfeicoada integration tools

Diamond compact supported, apparatus and process for the preparation of aperfeicoados compact chain aperfeicoada for stretching of wire and aperfeicoada integration tools

机译:支持金刚石压块的设备,方法和装置,用于制备用于拉伸金属丝和阿波菲柯达集成工具的阿波菲柯多紧密链阿波菲柯达

摘要

Compacts are provided in which one or more single crystal diamonds, having a largest dimension of at least one millimeter, are embedded in the polycrystalline matrix which may be made of diamond ; cubic boron nitride (CBN): and silicon and silicon carbide bonded diamond, CBN, or mixtures of diamond and CBN. The single crystal diamond is from 10-90 volume percent of the compact. The compacts (except for the silicon and silicon carbide variety) are made by high pressure-high temperature processing generally in the range of 50Kbar at 1300 DEG C to 85 Kbar at 1750 DEG C. They have application in several fields, for example, wire drawing die blanks, cutting tool blanks, and anvils for high pressure apparatus.
机译:提供了压块,其中将一种或多种最大尺寸至少为一毫米的单晶金刚石嵌入到可由金刚石制成的多晶基质中;立方氮化硼(CBN):与硅和碳化硅结合的金刚石,CBN或金刚石和CBN的混合物。单晶金刚石占压坯的10-90体积%。压坯(除了硅和碳化硅以外)是通过高压-高温处理制成的,通常在1300℃的50Kbar至1750℃的85Kbar的范围内。它们已在多个领域中应用,例如电线拉伸模具毛坯,切削工具毛坯和高压设备的砧。

著录项

  • 公开/公告号BR8005376A

    专利类型

  • 公开/公告日1981-03-10

    原文格式PDF

  • 申请/专利权人 GENERAL ELECTRIC CO;

    申请/专利号BR19808005376

  • 发明设计人 BOVENKERK H;VRIES R;

    申请日1980-08-22

  • 分类号B21C3/02;

  • 国家 BR

  • 入库时间 2022-08-22 16:19:19

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