PROCESS AND DEVICE FOR THE INTERFEROMETRIC MEASUREMENT OF CHANGING FILM THICKNESSES

摘要

An optical system and technique for monitoring a monotonic change in the thickness of a transparent film by means of optical interference, and for eliminating ambiguity in the identification of absolute film thickness. The system is particularly adapted for monitoring the etching of a dielectric film of uncertain initial thickness in microelectronic fabrication. The technique utilizes a white light source directed upon the film. Reflected light, modified by optical interference in the dielectric film, is monitored by photodetectors at two distinct wavelengths. The cyclic patterns of intensity change at the two wavelengths are compared to identify unambiguously the absolute thickness of the film, although the initial uncertainty in film thickness may have corresponded to several cycles of either wavelength pattern alone. To simplify phase comparison of the two cyclic patterns, wavelengths can be selected so that some particular coincidence of extrema in the two signals occurs at a film thickness less than the expected minimum initial thickness, and does not occur at any greater thickness up to and including the expected maximum. Determination of the absolute film thickness in this way permits further tracking of the etching process to the desired end point without overshoot.