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METHOD OF PRODUCING RELIEF STRUCTURES RESISTANT TO A HIGH TEMPERATURE, RELIEF STRUCTURES PRODUCED THEREBY AND THEIR USE

机译:产生耐高温的泄放结构的方法,由此产生的泄放结构及其用途

摘要

The invention relates to a method for the preparation of highly heat-resistant relief structures on the basis of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones by applying radiation-sensitive soluble polymer precursor stages to a substrate in the form of a film or a foil; irradiating the film or the foil through negative patterns with actinic light or by deflecting a light, electron or ion beam; removing the non-irradiated film or foil portions and optionally, by subsequent annealing; as well as the use of relief structures so prepared. It is an object of the invention to simplify the preparation of relief structures of the type mentioned. For this purpose, it is provided to use as the polymer precursor stages addition products of olefinically unsaturated monoepoxides to carboxyl group-containing polyaddition products of aromatic and/or heterocyclic tetracarboxylic acid dianhydrides and diamino compounds or diamino compounds with at least one orthoposition amido group or of aromatic and/or heterocyclic dihydroxy dicarboxylic acids or corresponding diamino dicarboxylic acids and diisocyanates. The relief structures prepared by the method according to the invention are suitable in particular for use as a resist, surface coating material and insulating material.
机译:本发明涉及一种基于聚酰亚胺,聚异吲哚并喹唑啉二酮,聚恶嗪二酮和聚喹唑啉二酮的高耐热浮雕结构的制备方法,该方法是通过将辐射敏感的可溶性聚合物前体阶段以薄膜或薄膜的形式施加到基材上。挫败;用光化性光或使光,电子或离子束偏转而通过负性图案照射薄膜或箔片;除去未辐照的膜或箔部分,并任选地,通过随后的退火除去;以及使用如此准备的浮雕结构。发明内容本发明的目的是简化所述类型的浮雕结构的制备。为此目的,提供了将烯属不饱和单环氧化物的加成产物与芳族和/或杂环四羧酸二酐和具有至少一个邻位酰胺基的二氨基化合物或二氨基化合物的含羧基的加成产物一起用作聚合物前体阶段。芳族和/或杂环二羟基二羧酸或相应的二氨基二羧酸和二异氰酸酯。通过根据本发明的方法制备的浮雕结构特别适合用作抗蚀剂,表面涂层材料和绝缘材料。

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