COMPRESSION BONDED ENCAPSULATION TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To pressurize the semiconductor substrate formed on a main surface of the first and second electrodes by a method wherein pressure balancing means with gradually differetiated gaps from central part to peripheral part in the radial direction are provided in the components such as electrode posts, soft metal plates and temperature compensating plates. CONSTITUTION:A cathode electrode 17 and a gate electrode 18 with mutual step difference are provided on a main surface of a substrate 10 while the first temperature compensating plate 12 is alloyed with the backside of the substrate 10 through the intermediary of an A1 foil 19. A semiconductor pellet is warped to convexity from central part to peripheral part thereof. Multiple groove or holes are formed on the internal side of an electrode post 14 becoming sparse from central part to peripheral part thereof while in case of a electrode post 15, becoming sparse from peripheral part to central part on the contrary. A soft metal plate 16, the semiconductor pellet, the second temperature compensating plate 13 and another soft metal plate 16 are laminated and inserted between a pair of electrode posts 14 and 15. Any pressure applied may be relieved since the central part is firstly pressurized in the electrode post 14 side while the peripheral part is pressurized more than the central part in the electrode post 15.