METHOD FOR DETERMINING THE CHARGED ENERGY STATES OF SEMICONDUCTORS AND INSULATORS BY TRANSIENT SPETROSCOPY OF DEEP EQUIPOTENTIAL SURFACES AND DEVICE FOR CARRYING OUT THE METHOD

• 1. 基于电位滴定法测定表面活性剂碱度的方法 [P] . 中国专利： CN113702473A . 2021-11-26
• 2. 一种瞬态偏振吸收光谱测量方法及实现该方法的一种激光闪光光解仪系统 [P] . 中国专利： CN105910995B . 2018.11.23
• 3. A method for determining charged energy states of semiconductor or insulator materials by using deep level transient spectroscopy, and an apparatus for carrying out the method [P] . 欧洲知识产权局专利： EP0117259B1 . 1987-05-06

  机译： 通过使用深能级瞬态光谱法确定半导体或绝缘体材料的带电能态的方法和实施该方法的设备

• 4. A METHOD FOR DETERMINING CHARGED ENERGY STATES OF SEMICONDUCTOR OR INSULATOR MATERIALS BY USING DEEP LEVEL TRANSIENT SPECTROSCOPY, AND AN APPARATUS FOR CARRYING OUT THE METHOD [P] . 德国专利： DE3371418D1 . 1987-06-11

  机译： 用深层瞬态光谱法测定半导体或绝缘材料带电能态的方法及实施该方法的装置

• 5. Method for determining charged energy states of semiconductor or insulator materials by using deep level transient spectroscopy, and an apparatus for carrying out the method [P] . 美国专利： US4571541A . 1986-02-18

  机译： 通过使用深能级瞬态光谱法确定半导体或绝缘体材料的带电能态的方法以及执行该方法的设备

• 1. FINITE DIFFERENCE FRACTIONAL STEP METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE [J] . Yuan Yirang 数学物理学报（英文版） . 2005,第003期
• 2. IMPLICIT-EXPLICIT MULTISTEP FINITE ELEMENT-MIXED FINITE ELEMENT METHODS FOR THE TRANSIENT BEHAVIOR OF A SEMICONDUCTOR DEVICE [J] . 陈蔚 数学物理学报（英文版） . 2003,第003期
• 3. Computerized FDTD Method for Longitudinal Optical Phonon Energy on Semiconductor Hybrid Structure for High Power Devices Fabrication [J] . Phyo Sandar Win, Hsu Myat Tin Swe, Hla Myo Tun 计算机科学研究(英文) . 2021,第002期
• 4. NUMERICAL METHOD OF MIXED FINITE VOLUME-MODIFIED UPWIND FRACTIONAL STEP DIFFERENCE FOR THREE-DIMENSIONAL SEMICONDUCTOR DEVICE TRANSIENT BEHAVIOR PROBLEMS [J] . Yirang YUAN, Qing YANG, Changfeng LI, 数学物理学报（英文版） . 2017,第001期
• 5. Discussion on "Empirical methods for determining shaft bearing capacity of semi-deep foundations socketed in rocks" J Rock Mech Geotech Eng6(2017)1140-151 [J] . Ergin Arioglu, Pinar Toru Seker, Hasan Burak Gokce 岩石力学与岩土工程学报（英文版） . 2018,第003期
• 6. Detailed Investigation of GaN Metal-Insulator-Semiconductor Structures by Capacitance-Voltage and Deep Level Transient Spectroscopy Methods [C] . Junjiroh Kikawa, Yuki Horiuchi, Eiji Shibata, Symposium A on Performance and Reliability of Semiconductor Devices . 2009
• 7. Methods for determining strain and localized pH on implanted medical device surfaces through tissue [D] . Benza, Donald William. 2016
• 8. Synthesis Methods Microscopy Characterization and Device Integration of Nanoscale Metal Oxide Semiconductors for Gas Sensing [O] . Randy L. Vander Wal, Gordon M. Berger, Michael J. Kulis, 2009
• 9. Accelerated Waveform Methods for Parallel Transient Simulation of Semiconductor Devices [O] . Andrew Lumsdaine, Mark W. Reichelt, Jeffrey M. Squyres, 1996
• 10. Numerical Methods for Transient Semiconductor Device Modelling [R] . Ringhofer, C. 1983

• 1. 应用光伏方法研究半导体表面态真空敏感机理 [C] . 颜永美 . 第十二届全国半导体物理学术会议 . 1999
• 2. 绝缘表面污层电导的高光谱检测方法研究 [A] . 马欢 . 2019