firm p amp; amp; darr; 2 amp; amp; darr; o amp; amp; darr; 5 amp; amp; darr; source of diffusionsdotieren of semiconductor material and method of manufacture

摘要

Solid diffusion sources for phosphorus doping comprise from 5 to 95 percent SiP.sub.2 O.sub.7 with an inert phase of ZrP.sub.2 O.sub.7. While such materials may be hot-pressed, it is preferred to cold-press and sinter to obtain diffusion source wafers of the appropriate dimensions and porosity. A preferred composition comprises from 25 to 75 weight percent SiP.sub.2 O. sub.7 the balance ZrP.sub.2 O.sub.7. Fabrication parameters range from about 4000 psi to about 20,000 psi pressure during cold-pressing, and from about 1080°C to about 1190°C firing temperature.