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Brief description of the formation of zones narrow in circuits integrated, in particular for the formation of grids, the isolation of components, the formation of regions doped and the manufacture of the transistors
Brief description of the formation of zones narrow in circuits integrated, in particular for the formation of grids, the isolation of components, the formation of regions doped and the manufacture of the transistors
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机译:简要描述了集成电路中狭窄区域的形成,特别是用于形成栅极,隔离元件,形成掺杂区域和制造晶体管
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摘要
A method of electrically isolating a plurality of semiconductor integrated circuit components and for forming gate elements for silicon gate transistors is disclosed whereby extremely narrow line widths can be formed which heretofore have been unattainable by practicing conventional photolithography.
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