The field effect transistor, a metal oxide semiconductor - - - conductor for high power having a direct connection between its connection pads and the silicon in - mechanisms

摘要

The invention relates to a device of the type field effect transistor, a metal oxide semiconductor - - -. & / p & & p & it comprises a chip semi conducting - 10, a plurality of regions of the base 17, 18, 19 of a first conductivity type, the regions of the source 30, 31, 32 of the other type of conductivity, respectively located in the regions of the base of a to define of the regions of a channel liable to be reversed, an insulating layer 41, 42, a network 40 of the grid located at the - the top of each region of the channel, an electrode of the source 60 in contact with the regions of the source and the regions of the base, a drain electrode 13, a stud 11 of the electrode of the source and a stud of electrode of the grid, a region 20 of the enlarged base extending beneath the electrode of the source, and means 82, 86 connecting the periphery of the studs of electrode has the region of enlarged base.