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Test system for VLSI digital circuit and method of testing

机译:用于vLSI数字电路的测试系统和测试方法

摘要

The conductive state of a transistor in a semiconductor integrated circuit is determined by irradiating the transistor with a radiation beam and measuring changes in load current, thereby indicating whether the transistor was conducting or non-conducting prior to irradiation. A correlated double sampling method is employed in measuring changes in load current. A load resistor in series with the device under test is capacitively coupled to a differential amplification means including a plurality of differential amplifiers with buffers connected between successive amplifiers. A system clock is stopped at a predetermined time period prior to irradiating the transistor. A bypass switch shunts the load resistor until the clock is stopped.
机译:通过用辐射束照射晶体管并测量负载电流的变化来确定半导体集成电路中晶体管的导电状态,从而指示在照射之前晶体管是导通还是不导通。相关双采样方法用于测量负载电流的变化。与被测设备串联的负载电阻器电容耦合到差分放大装置,该差分放大装置包括多个差分放大器,缓冲器连接在连续的放大器之间。在照射晶体管之前的预定时间段内停止系统时钟。旁路开关旁路负载电阻,直到时钟停止。

著录项

  • 公开/公告号US4588950A

    专利类型

  • 公开/公告日1986-05-13

    原文格式PDF

  • 申请/专利权人 DATA PROBE CORPORATION;

    申请/专利号US19830552089

  • 发明设计人 FRANCOIS J. HENLEY;

    申请日1983-11-15

  • 分类号G01R31/28;

  • 国家 US

  • 入库时间 2022-08-22 07:29:14

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