PURPOSE:To enhance the boosting and transferring efficiency per one stage by employing a transistor having two different threshold voltages for an MOS transistor of a Cockcroft type booster. CONSTITUTION:A semiconductor integrated circuit has a Cockcroft type booster, which is formed of N-type MOS transistors of enhancement type for the front stage side 4 and of depletion type for the rear stage side 5. Thus, the two or more type threshold voltages of the MOS transistors are effectively used to obtain a higher output voltage 3 than a prior art circuit.
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