PURPOSE:To grow high-pressure phase BN in a vapor phase on an arbitrary substrate at a high film forming speed by blowing a cooling gas to a plasma jet formed from gases by electric discharge to rapidly cool the plasma jet and bringing the formed nonequil. plasma into contact with the substrate. CONSTITUTION:The discharge gases 3 contg. a boron compd. such as H2B6 and nitrogen compd. such as NH3 is supplied as a raw material compd. for vapor growth to a hot plasma generator and is converted to radicals by the arc 11 of the electric discharge, by which the hot plasma is formed. This plasma is ejected from a nozzle 4 to form the plasma jet 5. The cooling gas such as H2 is vigorously blown from an ejection port 6 to the plasma jet 5 to rapidly cool the hot plasma. The active nonequil. plasma 12 which contains the radical product of the above-mentioned raw material compd. and has the high concn. thereof is thereby formed. The substrate 8 to be treated is brought into contact with this nonequil. plasma 12. The BN film 9 chemically vapor-grown from the hot plasma is thereby vapor-grown on the substrate 8, by which the high- pressure phase BN is vapor-grown.
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