PURPOSE:To obtain high-quality high pressure-phase boron nitride at high film- forming speed, by irradiating a substrate with heat plasma produced from a gaseous raw material containing boron and nitrogen in the form of a plasma jet and then applying rapid cooling to the above. CONSTITUTION:A gaseous raw material containing boron atoms and nitrogen atoms is prepared. This gaseous starting material is introduced through a gas- introducing hole 3, which is formed into heat-plasma state by means of arc discharge due to the inductive coupling of microwaves. Subsequently, this heat plasma is applied in the form of a plasma jet 9 to a substrate 10, followed by rapid cooling, by which vapor growth of high pressure-phase boron nitride can be applied to the substrate 10.
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