SEMICONDUCTOR DEVICE FOR PRODUCING PERIODICAL REFRACTIVE INDEX DISTRIBUTION AND PERIODICAL AMPLITUDE DISTRIBUTION

摘要

PURPOSE: To obtain a semiconductor device which can emit light in single mode by amplifying the light with the photon energy between two energy gaps of different semiconductor material. CONSTITUTION: A semiconductor laser is buried between an n-type semiconductor 21 and a p-type semiconductor 22 formed on a semiinsulating substrate 20. The semiconductor laser comprises a first layer 10 of a first semiconductor material having a refractive index n1 and an energy gap E1, and a second layer 11 of a second semiconductor material having a refractive index n2 and an energy gap E2. The first and second layers 10, 11 are formed repeatedly several times. The n-type semiconductor 21 and the p-type semiconductor 22 are fed with a current from contacts 23, 24. In a coordinate system 12 for defining the spatial position of a semiconductor device, the light propagates in Z direction.