method for adjusting the service life of the minoritätsladungsträger in halbleiterschaltern with two van

摘要

to influence the sperrverzu00f6gerungszeit of frequenzthyristoren and sperrverzugsladung and ru00fcckstromspitze in network thyristors the ready to contact diffused and metallized silicon elements both from the anodenseite (a) as well as the kathodenseite (k) with proton doses between 1 and 20 10 1 1 h / cm 2 is irradiated.the energy of the protons is adjusted so that the konzentrationsmaxima (10, 9) of the rekombinationszentren behind the anode and kathodenseitigen pn transition (6, 4) in the low doped basiszone (5). subsequent annealing are unstable rekombinationszentren and damage caused by bloom healed.