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FIFO memory for coupling frequency independent systems - is made in gallium arsenide, ELL etc. technique, permitting frequency conversion

机译:用于耦合频率独立系统的FIFO存储器-采用砷化镓,ELL等技术制成,允许频率转换

摘要

Frequency independent electric systems are coupled by a FIFO memory, realised in a GaAs, ECL, etc., technology. Thus a frequency conversion is possible even at very high writing or read-out frequencies. If realised in an ECL technology, the FIFO memory is capable of data processing up to the writing or read-out frequencies of 350 MHz. At the inputs or outputs of the FIFO memory is fitted a translator as logic converter for level variation. The logic converter may be in the form of an ECL to TTL, or TTL to ECL logic. The logic converter and the FIFO memory may form an integral unit. USE/ADVANTAGE - For dual port RAM(s) with extension up to high frequencies.
机译:频率独立的电气系统通过以GaAs,ECL等技术实现的FIFO存储器耦合。因此,即使在非常高的写入或读出频率下也可以进行频率转换。如果以ECL技术实现,则FIFO存储器能够处理高达350 MHz的写入或读出频率的数据。在FIFO存储器的输入或输出处装有一个转换器,作为用于电平变化的逻辑转换器。逻辑转换器可以采用ECL到TTL或TTL到ECL逻辑的形式。逻辑转换器和FIFO存储器可以形成整体单元。使用/优势-适用于双端口RAM,扩展频率最高。

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