IMPROVED PRESSURE-REDUCING CHEMICAL VAPOR DEPOSITION FOR DEPOSITING TITANIUM NITRIDE THIN FILM HAVING STABLE LOW ELECTRIC RESISTIVITY

摘要

PURPOSE: To provide a stable, low electric resistivity and to form a thin film which is conformal in hardness by introducing a substrate into a chemical vapor-deposition chamber, purging oxidation in the chamber, forming a flow of a mixture of gaseous ammonia and titanium-metal organic compound having a specific flow-velocity ratio and heating the substrate. ;CONSTITUTION: Deposition is performed in a chamber, wherein the pressure is reduced to 0.1-2Torr. As a precursor, ammonia and tetrakis (dimethylamide) titanium are used. A flow velocity is maintained at 30 times or more of the ammonia flow velocity in the depositing chamber and the flow velocity of the tetrakis (dimethylamide) titanium. Furthermore, a substrate is heated to at least 200°C. Thus, an obtained TiN thin film has a low bulk electric resistivity and has a constant resistance with respect to in time passage, even when exposed in an oxidizing atmosphere.;COPYRIGHT: (C)1993,JPO