Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing

摘要

A semiconductor processing method of chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate includes, a) providing a chemical mechanical polishing slurry comprising H.sub.3 PO. sub.4 at from about 0.1% to about 20% by volume; H.sub.2 O. sub.2 at from about 1% to about 30% by volume, H.sub.2 O, and a solid abrasive material; and b) chemical mechanical polishing an aluminum containing metal layer on a semiconductor substrate with the slurry. Such process and slurry are also usable in chemical mechanical polishing of other layers, such as Ti, TiN and TiW materials. Such enables chemical mechanical polishing of a barrier metal/aluminum layer composite in a single polishing step, leading to increased controllability and resulting increased throughput. With respect to aluminum containing metal layers, the H.sub.2 O.sub.2 is understood to cause oxidation to aluminum oxide, which is subsequently removed by both chemical and mechanical action the result of the polish and slurry. Oxidizing agents other than H.sub.2 O. sub.2 are contemplated.