首页> 外国专利> 文献详情

Semiconductor device with a photodetector switching device grown on a recrystallized monocrystal silicon film

机译:具有在重结晶的单晶硅膜上生长的光电探测器开关器件的半导体器件

摘要

A semiconductor device is disclosed which comprises a normally- off first MOSFET, a normally-off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET, wherein all of the components are formed on a single semiconductor chip. Also disclosed is a semiconductor device comprising a normally-off first MOSFET, a normally- on second MOSFET connected between the gate and source of the first MOSFET, a first resistor and a diode, both of which are connected in series between the source and drain of the second MOSFET, a second resistor connected between the gate and source of the second MOSFET, an optoelectric transducer array connected between the gate of the second MOSFET and the terminal which is positioned between the first resistor and the diode, wherein all of the components are formed on a single semiconductor chip. PPFurther disclosed is a method for manufacturing a semiconductor device comprising a normally-off first MOSFET, a normally- off second MOSFET connected between the gate and source of the first MOSFET, a diode connected between the gate and source of the second MOSFET, a resistor and an optoelectric transducer array, both of which are connected in parallel with each other between the gate and drain of the second MOSFET.
机译:公开了一种半导体器件,其包括:常关第一MOSFET,连接在第一MOSFET的栅极和源极之间的常关第二MOSFET,连接在第二MOSFET的栅极和源极之间的二极管,电阻器和光电换能器阵列,其在第二MOSFET的栅极和漏极之间彼此并联连接,其中所有组件形成在单个半导体芯片上。还公开了一种半导体器件,该半导体器件包括常关的第一MOSFET,连接在第一MOSFET的栅极和源极之间的常开的第二MOSFET,第一电阻器和二极管,二者均串联在源极和漏极之间。在第二MOSFET的第二端中,第二电阻器连接在第二MOSFET的栅极和源极之间,光电换能器阵列连接在第二MOSFET的栅极和位于第一电阻器和二极管之间的端子之间,其中所有组件它们形成在单个半导体芯片上。

进一步公开了一种用于制造半导体器件的方法,该半导体器件包括常关的第一MOSFET,连接在第一MOSFET的栅极和源极之间的常关的第二MOSFET,以及连接在MOSFET的栅极和源极之间的二极管。第二MOSFET,电阻器和光电换能器阵列均在第二MOSFET的栅极和漏极之间彼此并联连接。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

联系方式:18141920177 (微信同号)

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号