Method for recrystallization of preamorphized semiconductor surfaces zones

摘要

A method for thermal annealing of amorphous surface layers on a single- crystal semiconductor base element. The amorphous surface layer is obtained by implantation of germanium or silicon ions in a single- crystal silicon base element. Finally, the amorphous layer is doped by implantation of impurities and subjected to a three-step annealing process. During the first step of this process, the interface region between the amorphous layer and the single-crystal base element is smoothed at a temperature between 400 and 460 C., in the second step the amorphous layer recrystallizes at a temperature between 500 and 600 C., and in the third step the dopants are activated in an RTA process.