首页> 外国专利> Method for recrystallization of preamorphized semiconductor surfaces zones

Method for recrystallization of preamorphized semiconductor surfaces zones

机译:预非晶化半导体表面区域的再结晶方法

摘要

A method for thermal annealing of amorphous surface layers on a single- crystal semiconductor base element. The amorphous surface layer is obtained by implantation of germanium or silicon ions in a single- crystal silicon base element. Finally, the amorphous layer is doped by implantation of impurities and subjected to a three-step annealing process. During the first step of this process, the interface region between the amorphous layer and the single-crystal base element is smoothed at a temperature between 400 and 460 C., in the second step the amorphous layer recrystallizes at a temperature between 500 and 600 C., and in the third step the dopants are activated in an RTA process.
机译:一种在单晶半导体基础元件上对非晶表面层进行热退火的方法。通过在单晶硅基础元件中注入锗或硅离子来获得非晶表面层。最后,通过注入杂质来掺杂非晶层,并对其进行三步退火工艺。在此过程的第一步中,非晶层和单晶基础元件之间的界面区域在400至460℃之间进行平滑处理。在第二步中,非晶层在500至600℃之间进行重结晶在第三步骤中,在RTA过程中激活掺杂剂。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号