METHOD FOR CONTROLLING FILM THICKNESS OF THIN FILM AND LAYER THICKNESS OF MULTILAYERED THIN FILM

摘要

PURPOSE: To control the thicknesses of vapor deposited films (layers) by a sputtering vapor deposition method capable of making the film thicknesses of the thin films or the layer thicknesses of the respective layers as a function G(r) of an arbitrary distance from the center. N ;CONSTITUTION: A mask having a suitable opening part is inserted between a target for sputtering and a substrate for vapor deposition and either of the substrate for vapor deposition or the mask 1 is rotated along the respective planes in the sputtering vapor deposition method. The size of the opening part 2 of the mask 1 is so adjusted as to have the area f(r) of the opening part from the center at which a desired film (layer) thickness distribution is obtd. The mask having such an opening part that the max. value of the f(r) does not exceed 1/10 the radius R of the mask 1 is used by taking the diagonal vapor deposition effect of this time into consideration. The f(r) in the case of use of such mask is determined as f(r)=A.G(r)/GA(r) by using the film thickness distribution GA(r) at the time of using a slit mask having a width A and the desired film thickness distribution.;COPYRIGHT: (C)1994,JPO&Japio