首页> 外国专利> SWITCHING CIRCUIT FOR HORIZONTAL SIGMOID CORRECTION CAPACITOR AND HORIZONTAL SIGMOID DISTORTION CORRECTING DEVICE USING THE SAME

SWITCHING CIRCUIT FOR HORIZONTAL SIGMOID CORRECTION CAPACITOR AND HORIZONTAL SIGMOID DISTORTION CORRECTING DEVICE USING THE SAME

机译:使用相同的水平西格曼校正电容器和水平西格曼畸变校正装置的开关电路

摘要

PURPOSE: To use a switching element with low breakdown strength by connecting a diode with the switching element serially connected with a sigmoid correction capacitor in parallel, and connecting the anode with the sigmoid correction capacitor. ;CONSTITUTION: At the time of interruption of a control switch 15, an NPN transistor 12 is turned off, and a sigmoid correction capacitor 10 is connected with a diode 11, and the diode 11 is conducted. Afterwards, a positive charge charged to a sigmoid correction capacitor 9 starts to run to a horizontal deflection yoke 4 from the later half start of deflection, and simultaneously a voltage V1 starts to decrease. At that time, the diode 11 is turned into an interrupted state, and a voltage V, also starts to decrease from a voltage 0 similarly to the voltage V1. At the time of the interruption of the control switch 15, the highest voltage of the voltage V0 is clamped to 0V. Therefore, voltage peak values impressed to the both sides of the switching element decrease, and the switching element with the low breakdown strength can be used.;COPYRIGHT: (C)1994,JPO
机译:目的:使用具有低击穿强度的开关元件,方法是将二极管与串联连接在S型校正电容器上的开关元件并联,然后将阳极与S型校正电容器连接,以使用低击穿强度的开关元件。 ;组成:在控制开关15中断时,NPN晶体管12截止,并且S型校正电容器10与二极管11连接,并且二极管11导通。然后,从后半个偏转开始,向S形校正电容器9充电的正电荷开始流向水平偏转线圈4,同时电压V 1 开始下降。那时,二极管11变成截止状态,并且电压V也类似于电压V 1 从电压0开始减小。在控制开关15中断时,电压V 0 的最高电压被钳位到0V。因此,施加在开关元件两侧的电压峰值减小,并且可以使用击穿强度低的开关元件。;版权所有:(C)1994,JPO

著录项

  • 公开/公告号JPH06284308A

    专利类型

  • 公开/公告日1994-10-07

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP19930068221

  • 发明设计人 MURAKAMI YASUO;

    申请日1993-03-26

  • 分类号H04N3/23;

  • 国家 JP

  • 入库时间 2022-08-22 04:49:27

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