Bonded silicon@ wafer-glass or silicon@-silicon@ joint prodn. - comprises using laser light radiation to initially fix materials at spot(s) and/or lines and conventional high temp. bonding for pressure and acceleration sensors or micro-system elements

摘要

Prodn. involves (a) using laser or other intense light radiation to bond the materials at spot(s) and/or lines; and (b) using conventional high temp. bonding to bond the materials solidly. Irradiation is pref. at room temp. when silicon is bonded to glass, a voltage is applied between the materials so that local bonding comprises a combination of local heating and ion migration, and high temp. bonding is by anodic bonding at high temp.. When silicon is bonded to silicon, local bonding comprises local heating with IR (laser) radiation and high temp. bonding comprises fusion bonding at above 1000 deg.C.. When two silicon layers are bonded via a thin glass layer, local bonding comprises IR (laser) radiation and high temp. bonding comprises by anodic bonding. USE/ADVANTAGE - The prodn. is useful for bonding silicon wafers to each other or to glass sheets prior to dicing into chips e.g. for pressure and acceleration sensors or elements for microsystems e.g. pumps of ink jet printers. The initial localised bonding reliably fixes the materials, may be carried out rapidly and easily at roomp temp. and bonds nuclei for growth of the high temp. bond.