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Formation manner null of the component and the SiC content coat which possess SiC content

机译:具有SiC含量的成分和SiC含量涂层的形成方式无效

摘要

PURPOSE:To easily form an SiC-containing coating film containing SiC and Si and having high adhesivity, by forming a pure Si layer or an Si layer containing a small amount of SiC on a silicon nitride substrate and successively increasing the content of SiC. CONSTITUTION:A pure Si layer or an Si layer containing a small amount of SiC is deposited on a silicon nitride substrate 1 by passing pure silicon raw material gas (e.g. SiCl4) or a silicon raw material gas containing a small amount of a carbon raw material gas (e.g. C3H8). The ratio of the carbon raw materials gas in the silicon raw material gas is successively increased to form an SiC- containing coating film 2 containing SiC and Si. The part having the obtained SiC-containing coating film 2 has excellent corrosion resistance and abrasion resistance of SiC. Since the coating film 2 contains Si, the thermal expansion difference between the film and the silicon nitride substrate 1 is decreased to keep the film from peeling and cracking.
机译:目的:为了容易地形成包含SiC和Si并具有高粘附性的SiC涂膜,方法是在氮化硅衬底上形成纯Si层或包含少量SiC的Si层,并依次增加SiC的含量。组成:通过使纯硅原料气体(例如SiCl4)或含有少量碳原料的硅原料气体通过,在氮化硅衬底1上沉积纯Si层或包含少量SiC的Si层气体(例如C3H8)。碳原料气体在硅原料气体中的比例依次增加,以形成包含SiC和Si的含SiC的涂膜2。具有获得的含SiC的涂膜2的部分具有优异的SiC的耐腐蚀性和耐磨性。由于涂膜2包含Si,因此减小了膜与氮化硅衬底1之间的热膨胀差,从而防止了膜的剥离和破裂。

著录项

  • 公开/公告号JPH0712989B2

    专利类型

  • 公开/公告日1995-02-15

    原文格式PDF

  • 申请/专利权人 三井造船株式会社;

    申请/专利号JP19870150996

  • 发明设计人 茅根 美治;藤田 房雄;

    申请日1987-06-17

  • 分类号C04B41/87;

  • 国家 JP

  • 入库时间 2022-08-22 04:26:58

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