METHOD OF FORMING SEMICONDUCTOR FILM AND METHOD OF FABRICATING THIN FILM SEMICONDUCTOR DEVICE, AND METHOD OF HEAT-TREATING SUBSTRATE AND METHOD OF CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: To provide a method of fabricating a thin film semiconductor device having satisfactory transistor characteristics in a low temperature process. ;CONSTITUTION: An amorphous semiconductor film is deposited, and is thereafter heat-treated in an oxidative atmosphere. Hereby, a TFT having satisfactory transistor characteristics can be fabricated uniformly into a large area in a low temperature process by a simplified method.;COPYRIGHT: (C)1995,JPO