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Method for manufacturing high-temperature superconductor of mercury (Hg)-barium (Ba)-calcium (Ca)-copper (Cu)-oxygen (O)
Method for manufacturing high-temperature superconductor of mercury (Hg)-barium (Ba)-calcium (Ca)-copper (Cu)-oxygen (O)
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机译:汞(Hg)-钡(Ba)-钙(Ca)-铜(Cu)-氧(O)的高温超导体的制造方法
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摘要
The present invention relates to a method of manufacturing a high-temperature superconductor used in electronic devices such as computers, a geological exploration apparatus, a medical instrument, and a military detector, and more particularly, to a method of manufacturing a superconductor of Hg-Ba-Ca-But it has its purpose.;The present invention relates to a method for producing a Hg-Ba-Ca-Cu-O system high-temperature superconductor, which comprises reacting BaCaCu2O5 + XCompound and CaCuO2 + xPreparing a compound; The Ba2CaCu2O5 + XCompound and mercury oxide are mixed at a molecular ratio of 1: 1 and then reacted at a temperature of 800-820C and a mercury vapor pressure of 100-300 atm to form HgBa2CaCu2O5 + XPreparing a compound; The HgBaCaCu2O5 + XCompound and CaCuO2 + xCompounds are mixed at a molecular ratio of 1: 0.5 to 1: 1 and then reacted at a temperature of 820-850C and a mercury vapor pressure of 100-300 atm to form HgBa2CaCu2O8 + XPreparing a compound; And HgBaCaCu2O8 + XBa-Ca-Cu-O based high-temperature superconductor according to the present invention comprises a step of heat-treating a compound with oxygen at a temperature of 250-300C and a pressure of 1 atm .
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机译:高温超导体的制造方法技术领域本发明涉及一种在电子设备中使用的高温超导体的制造方法,所述高温超导体用于诸如计算机,地质勘探设备,医疗仪器和军事探测器之类的电子设备中,并且更具体地,涉及一种制造Hg-超导体的方法。 Hg-Ba-Ca-Cu-O系高温超导体的制造方法技术领域本发明涉及一种Hg-Ba-Ca-Cu-O系高温超导体的制造方法,其包括使BaCaCu 2 Sub> O < Sub> 5 + X Sub>化合物和CaCuO 2 + x Sub>制备化合物; Ba 2 Sub> CaCu 2 Sub> O 5 + X Sub>化合物和氧化汞以1:1的分子比混合,然后在一定温度下反应在800-820℃和100-300atm的汞蒸气压下形成HgBa 2 Sub> CaCu 2 Sub> O 5 + X Sub>;制备化合物;将HgBaCaCu 2 Sub> O 5 + X Sub>化合物和CaCuO 2 + x Sub>化合物以1:0.5到1:1的分子比混合然后在820-850℃的温度和100-300 atm的汞蒸气压力下反应,形成HgBa 2 Sub> CaCu 2 Sub> O 8 + X Sub>制备化合物;并且,根据本发明的HgBaCaCu 2 Sub> O 8 + X Sub> Ba-Ca-Cu-O基高温超导体包括以下步骤:用氧对化合物进行热处理。温度为250-300℃,压力为1 atm。
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