Infrared detector using a resonant optical cavity for enhanced absorption

摘要

A photodetector for detecting optical irradiation at a predetermined wavelength is provided with an integral, resonant optical cavity by forming a plurality of layers of material on a metallic reflector backing, the total optical thickness of those layers being an odd multiple of one- quarter of the predetermined wavelength. One of those layers is an active (i.e. optically-absorptive) semiconductor material. When the materials are deposited, that absorbing layer is formed at a level in the cavity including a region of peak optical field. As a result of the enhanced absorption provided by the resonant structure, the active layer may be very thin (i.e., less than one-tenth of a wavelength thick), yielding many beneficial results.