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Process for fabricating device having titanium-tungsten barrier layer and silicide layer contacted shallow junction simultaneously formed
Process for fabricating device having titanium-tungsten barrier layer and silicide layer contacted shallow junction simultaneously formed
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机译:同时形成钛钨阻挡层和硅化物层接触浅结的器件的制造工艺
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摘要
A process for fabricating a device having a TiW barrier layer and a relatively shallow junction contacted with a silicide layer wherein said TiW barrier layer and said silicide layer are simultaneously formed comprising steps of preparing a Si substrate, applying a layer including therein a Ti and an appropriate X element such as Co or Pt on the Si substrate, applying a W layer on the layer including therein the Ti and the X element for forming a W/X-Ti/Si structure, and transforming the W/X- Ti/Si structure into a TiW/silicide/Si structure to obtain the device having a TiW barrier layer and a silicide layer contacted shallow junction. The present invention provides a simplified process for fabricating such a device having therewith a junction of a low resistance and a high temperature stability.
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