PURPOSE:To separate certainly a resist on a thin film without giving any damage to a chromic thin film by controlling the temperature in a cylindrical etching device under 80 deg.C in separating a resist on the chromic thin film with an oxygen plasma. CONSTITUTION:Plural members to be treated 3 are charged in each quartz substrate on a board 2 in a cylindrical plasma etching device 1. After the inside of a reaction tube 4 of quarts in this device 1 is exhausted through an xhausting tube 5, the reaction gas is supplied through a gas supplying tube 6 and the reaction gas is plasmolyzed with a high frequency output from outside, the resist of the member 3 to be treated 3 is separated with plasma ashing. When a thermometer 7 is arranged in this device 1 and an atmosphere in the reaction tube 4 becomes over 70 deg.C, the high frequency of ashing condition is set at reduction or zero and a soft ashing not heating over 80 deg.C is done. The resist on the thin film is separated without giving any damage onto the chromic thin film.
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