首页> 外国专利> METHOD OF DICING SEMICONDUCTOR WAFER FOR PREVENTING FORMATION OF SLIVER FROM CUT TEST PAD AND DIE GENERATED BY DICING OF WAFER

METHOD OF DICING SEMICONDUCTOR WAFER FOR PREVENTING FORMATION OF SLIVER FROM CUT TEST PAD AND DIE GENERATED BY DICING OF WAFER

机译:切割半导体晶片以防止晶片切块所产生的切屑和模具中的残渣形成的方法

摘要

PURPOSE: To prevent a sliver from being formed from a cut test pad by cutting a wafer partially inside along a sheet by using a rotary cutter and forming a groove to be cut through a test pad. ;CONSTITUTION: A cutter 54 has a cutting edge in an inclined shape with two inclined side surfaces 54a and 54b. The cutter 54 cuts a wafer 40 only partially toward the inside. Then, a groove with two angles or an inclined edge is formed in the wafer 40. When the cutter 54 passes through the test pad 52 is cut, a sliver generated owing to the cutting of the test pad 52 is all compressed into a cutting area and is sheared by the inclined side surfaces 54a and 54b of the cutter 54.;COPYRIGHT: (C)1996,JPO
机译:目的:通过使用旋转切割机沿薄片部分切开晶片并形成要切穿测试垫的凹槽,以防止从切下的测试垫形成细条。组成:刀具54具有倾斜形状的切削刃,该切削刃具有两个倾斜的侧面54a和54b。切割器54仅部分地向内部切割晶片40。然后,在晶片40中形成具有两个角度或倾斜边缘的凹槽。当切割器54穿过测试垫52时,由于测试垫52的切割而产生的条被全部压缩到切割区域中。并被切刀54的倾斜侧面54a和54b剪切。版权:(C)1996,JPO

著录项

  • 公开/公告号JPH0851089A

    专利类型

  • 公开/公告日1996-02-20

    原文格式PDF

  • 申请/专利权人 LSI LOGIC CORP;

    申请/专利号JP19950113209

  • 发明设计人 NANVAL KARINAJI;

    申请日1995-05-11

  • 分类号H01L21/301;B24B27/06;

  • 国家 JP

  • 入库时间 2022-08-22 03:57:06

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