VAPOR PHASE EPITAXIAL GROWTH METHOD AND SUBSTRATE HOLDER FOR VAPOR PHASE EPITAXIAL GROWTH SYSTEM

摘要

PROBLEM TO BE SOLVED: To enhance the uniformity of temperature and thin film significantly by holding a substrate in a reaction tube while directing the vapor phase epitaxial growth face downward and introducing a material gas while revolving and spinning the substrate. ;SOLUTION: Dimensions at each part are set such that the lower end of a substrate holding member 10 is flush with the lower surface of a table 20 and the vapor phase epitaxial growth face of a substrate 2 being held in the substrate holding member 10 is also flush with the lower surface of table 20. The substrate holding member 10 being fitted in an insertion hole 21 of the table 20 is turned together with the table 20 and the substrate 2 being set in the substrate holding member 10 revolves around the rotary axis of table 20. Furthermore, an external gear 12 carried on the flange 13 of substrate holding member 10 meshes a ring 30 with internal gear to cause rotation of the substrate holding member 10 and thereby the substrate 2 spins through rotation of the substrate holding member 10 while revolving through rotation of the table 20.;COPYRIGHT: (C)1997,JPO