SEMICONDUCTOR MANUFACTURING METHOD FOR DEGENERATING IMPURITY DISTRIBUTION IN CHANNEL BY PHOSPHOROUS IMPLANTATION

摘要

PROBLEM TO BE SOLVED: To degenerate the impurity distribution in a channel by implanting phosphorous. ;SOLUTION: A sacrifice oxide layer is formed on a Si substrate, an implantation for adjusting the threshold voltage is applied, the victim layer is removed, a gate oxide layer is formed, a gate poly-Si layer is deposited, defined and etched to form a gate 62, a primary P implantation is applied to form a lightly doped drain(LDD), a secondary P implantation is applied into a channel 66 to degenerate the impurity distribution curve of the channel.;COPYRIGHT: (C)1997,JPO