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FORMATION OF ATOMIC SCALE VERTICAL FEATURES FOR TOPOGRAPHIC INSTRUMENT CALIBRATION FOR TOPOGRAPHIC GASTRIC MEASUREMENTS

机译:用于断层胃测量的断层仪器校准的原子尺度垂直特征的形成

摘要

Measured objects for the topographical inspection instrument operate at submicrometer isolation levels and have features at vertical heights of spacing of atomic size on the order of 10 angstroms. A feature is formed on a silicon substrate, such as a wafer, by depositing a thick oxide, such as a conventional thermal oxide, on the wafer surface. The pattern of the features is patterned and etched at the level of the unprocessed silicon on the wafer surface. The etched regions are converted to thin oxides that are slightly lowered to the level of silicon in these regions. All of the oxide is removed and a slightly lower level of silicon provides a lift to the feature with a vertical topographic size of atomic size. Millions of such features are created simultaneously on polished wafers to mimic the haze effect or micro-roughness.
机译:用于形貌检查仪器的被测物体在亚微米隔离水平下工作,并且在原子尺寸间距的垂直高度处具有大约10埃的特征。通过在晶片表面上沉积诸如传统的热氧化物的厚氧化物,在诸如晶片的硅衬底上形成特征。在晶片表面上未加工的硅的水平上对特征的图案进行图案化和蚀刻。蚀刻的区域被转化为薄的氧化物,这些氧化物被稍微降低到这些区域中的硅水平。去除了所有的氧化物,硅的含量略低,从而使特征具有原子尺寸的垂直形貌提升。在抛光的晶圆上同时创建了数百万个此类特征,以模仿雾度效应或微粗糙度。

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