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Process of making a semiconductor device using crystal growth by a nucleation site in a recessed substrate and planarization
Process of making a semiconductor device using crystal growth by a nucleation site in a recessed substrate and planarization
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机译:利用通过凹陷的衬底中的成核位置的晶体生长和平坦化来制造半导体器件的工艺
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摘要
A semiconductor device includes a substrate, a recess formed on the substrate, a first conductive type semiconductor region and a second conductive type semiconductor region having an opposite conductive type to the first conductive type formed in the recess formed on the substrate, and wiring portions, wherein the surfaces of the substrate, the first conductive type semiconductor region and the second conductive type semiconductor region and are continuously on one plane, and the wiring portions connected respectively to the first conductive type semiconductor region and the second conductive type semiconductor region are formed on and in contact with the plane and are all substantially on the same plane and electrically independent from each other.
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