首页>
外国专利>
In-situ temperature measurement using X-ray diffraction
In-situ temperature measurement using X-ray diffraction
展开▼
机译:使用X射线衍射进行原位温度测量
展开▼
页面导航
摘要
著录项
相似文献
摘要
A non-contact in-situ temperature measurement apparatus for a single crystal substrate such as a semiconductor wafer using X-ray diffraction. Utilizing the Bragg condition for X-ray diffraction, the lattice constant of the semiconductor substrate can be determined either by measuring the diffraction angle for a monochromatic X-ray (monochromatic approach) or by measuring the wavelength of an X-ray diffracted with a certain scattering angle (polychromatic approach). The lattice constant, as a well-known function of temperature, is finally converted into the temperature of the semiconductor substrate.
展开▼