METHOD AND SYSTEM FOR HIGH-ACCURACY IMPURITY CONCN. PROFILE MEASUREMENT

摘要

PROBLEM TO BE SOLVED: To accurately measure the impurity concn. profile of a channel region of a MOS transistor, by correcting the measured result of an impurity concn. profile, based on the threshold voltage change to the substrate bias. ;SOLUTION: Using a measured profile of the impurity concn. in a channel region of a semiconductor element 1 and the threshold voltage change due to the measured substrate bias change, a computed profile of the impurity concn. in a source-drain region from process data. The total impurity concn. profile is computed from the measured profile and calculated profile of the source-drain region to compute the threshold voltage change due to the substrate bias change. The measured and calculated threshold voltage change are compared and the measured profile is corrected so as to reduce the error thereof. Using the corrected profile, the above steps are repeated to output a corrected profile when specified value of the error is reached.;COPYRIGHT: (C)1998,JPO