Solution grain growth manner and solution grain growth device

摘要

PURPOSE: To obtain a crystal having a uniform height in its outer peripheral part and contg. no inclusions by rotating a vessel around an axis almost perpendicular to the surface of a crystal precipitation part at the time of executing crystal growth by forming a temp. difference above and below a soln., arranging a source crystal in the high-temp. part and arranging the seed crystal in the low-temp. part. ;CONSTITUTION: A seed crystal 5 is retained by a seed stopper 4 and is fixed to a recessed part atop a heat sink 6. A source crystal 2 is held by utilizing the difference K in level of the vessel for for crystal growth. The vessel 1 in which the source crystal 2, a solvent 3 and the seed crystal 5 are packed is evacuated to a high vacuum and its open end is sealed. The lower part of the vessel 1 is held by a holding base 10 arranged on the central axis of a furnace core tube 7. A quartz rod 11 is connected to the upper part at the peak of the vessel 1 and is held by an upper part supporting mechanism 12. The vessel is made rotatable by means of a motor 13 and a belt 14. The vessel 1 is arranged into an electric furnace 12 and is heated up by inclining the vessel 1. After the source crystal 2 is melted into the solvent 3, the furnace core tube 7 is erected upright, by which the temp. gradient is formed and the crystal is allowed to grow.;COPYRIGHT: (C)1995,JPO