首页> 外国专利> Y monocrystal under under 4 under xCuO under xCe under under 2 under Ln and production manner null of y thin film under under 4 under xCuO under xCe under under 2 under

Y monocrystal under under 4 under xCuO under xCe under under 2 under Ln and production manner null of y thin film under under 4 under xCuO under xCe under under 2 under

机译:Ln下xCuO下xCe下2下Y的单晶Yn和xCe下2C下xCuO下4 Cu下的xCuO下的y薄膜的生产方式无效

摘要

A thin film of a single crystal of an oxide having a composition formula of Ln2-xCexCuO4-y wherein Ln is at least one rare earth element selected from the group consisting of Pr, Nd, and Sm and x is a number of 0.14 to 0.18, wherein the (001) plane of the single crystal is parallel with the film surface, which thin film exhibits superconductivity without post-treatment. The film is produced by simultaneously evaporating Ln, Ce, and Cu from discrete evaporation sources while supplying oxygen gas close to the substrate surface.
机译:组成式为Ln2-xCexCuO4-y的氧化物的单晶薄膜,其中Ln是选自Pr,Nd和Sm的至少一种稀土元素,x为0.14至0.18 ,其中单晶的(001)面与膜表面平行,该薄膜表现出超导性而无需后处理。通过同时从离散的蒸发源蒸发Ln,Ce和Cu,同时在靠近基板表面的位置供应氧气来生产薄膜。

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