The electrostatic induction die semiconductor device null which possesses electrostatic induction main electrode short circuit

摘要

PURPOSE: To reduce the quantity of turn-OFF leas-out charge by providing an electrostatic induction cathode short-circuit region surrounding by a cathode diffusion layer, in an element structure having distribution type main electrode structure. ;CONSTITUTION: The diagram mentioned separately is an example in which an electrostatic induction cathode short-circuit structure and an electrostatic anode short-circuit structure are combined. No.6 in the diagram is an n⁺ short-circuit layer. As electrostatic effect is utilized in the above-mentioned anode short-circuit structure, it becomes an SI anode short-circuit structure. An n⁺ cathode region 11 is divided into small regions, and the cathode short-circuit region, in which electrostatic induction effect is utilized, is arranged in such a manner that it is pinched by the cathode region 11. A potential barrier, when can be controlled by electrostatic effect, is formed on the front of a cathode short-circuit region 15, and the p⁺ cathode short-circuit region 15 forms the drain of the hole absorbed to a cathode electrode 7a. As above-mentioned, a turn-OFF time can be reduced and a tail time can be reduced by combining the electrostatic induction cathode short-circuit structure and the SI anode short-circuit structure.;COPYRIGHT: (C)1994,JPO&Japio