High power semiconductor laser with new heat dissipation structure

摘要

The present invention effectively dissipates the heat generated when the conventional 0.98㎛ semiconductor laser operates at high power, thereby reducing the oscillation wavelength change according to the temperature of the semiconductor laser and increasing the quantum efficiency to improve the characteristics of the semiconductor laser. The structure of the laser, the area in which light on the left and right sides of the active layer is not induced, the semiconductor laser chip is connected to the chip fixing substrate using solder, and the TEC for heat dissipation is connected to the chip fixing substrate. A semiconductor laser having was prepared.;Accordingly, the semiconductor laser of the present invention improves the efficiency of the semiconductor laser by providing a new type of heat dissipation structure that narrows the distance between the active layer and the metal layer, which is the main cause of heat generation, by etching the active layer regions on the left and right of the ridge. It became.