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In-situ dop trough polysilicon memory cell structure formed using vapor nuclei
In-situ dop trough polysilicon memory cell structure formed using vapor nuclei
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机译:利用蒸气核形成的原位掺杂沟槽多晶硅存储单元结构
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摘要
A method of forming a semiconductor memory device memory cell structure with increased surface area is disclosed. The memory cell structure has at least one rough polysilicon surface formed by depositing polysilicon as a condition to induce vapor phase dominant nuclei.
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