Method of Controlling Reactions between tetrakis dialkylamine titanium and ammonia for producing titanium nitride films

摘要

Chemical vapor deposition of titanium nitride thin films is based upon the gas phase kinetics of the reaction of a metal-amido precursors, e.g. tetrakis dimethylamido titanium (Ti(NMe.sub.2).sub.4), which when reacted with a reagent, for example, NH.sub.3 produces in a transamination reaction, an amine, e.g. HNMe.sub.2, as a direct product, which when added to the reaction in excess, inhibits the reversible transamination reaction so as to slow and control the rate of reaction to produce titanium nitride films having conformal step coverage over sub- micron integrated circuit features.