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CONTAMINATION DEGREE DETECTING METHOD FOR SUBSTRATE SURFACE, AND DEVICE THEREFOR

机译:基体表面的污染程度检测方法及装置

摘要

PROBLEM TO BE SOLVED: To efficiently and accurately measure a contamination degree on a surface of a large substrate of silicon wafer or quartz without destroying it. ;SOLUTION: This contamination degree detecting device consists of a flat cooling plate having a cooling function, on the surface of which small protuberances 4 are provided so that the inspected substrate 1 is placed on the protuberances 4, a beam irradiate device 6 which is located above the cooling plate with a space kept from it, so that a parallel beam 9 is irradiated toward the cooling plate and a scattered light observation camera 10 which is located in the space between the cooling plate and the beam irradiating device, and how the inspected surface of the substrate is contaminated is detected by a scattering ring 13 taken by the scattered light observation camera 10.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:有效且准确地测量大型硅晶片或石英基板表面上的污染程度,而不会对其造成破坏。 ;解决方案:该污染程度检测装置由具有冷却功能的平板冷却板组成,在其表面上设有小突起4,以便将被检查的基板1放置在突起4上,并设置射线照射装置6在冷却板上方保持一定距离,以便向冷却板照射平行光束9和位于冷却板与光束照射装置之间的空间中的散射光观察相机10,以及如何检查通过由散射光观察照相机10拍摄的散射环13来检测被污染的基板表面。版权所有:(C)1999,JPO

著录项

  • 公开/公告号JPH11248617A

    专利类型

  • 公开/公告日1999-09-17

    原文格式PDF

  • 申请/专利权人 KAWAI AKIRA;

    申请/专利号JP19980061923

  • 发明设计人 KAWAI AKIRA;

    申请日1998-02-27

  • 分类号G01N13/00;G01N21/88;H01L21/66;

  • 国家 JP

  • 入库时间 2022-08-22 02:37:30

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