QUICK ANALYTICAL METHOD FOR TRACE AMOUNT OF PHOSPHORUS IN SILICON MATERIAL

摘要

PROBLEM TO BE SOLVED: To obtain a quick analytical method in which a trace amount of phosphorus in a high-purity silicon material used for a solar cell, a semiconductor, an electronic material or the like can be quantitatively analyzed in a short time and quickly by a method wherein the silicon material is inserted directly into a plasma so as to be excited to emit light and the luminous intensity of the phosphorus is measured. ;SOLUTION: A silicon material which is housed in a sample cup such as a graphite cup or the like is inserted directly into a high-temperature plasma so as to be excited to emit light, and the luminous intensity of phosphorus is measured. The obtained luminous intensity of the phosphorus is converted into the concentration of the phosphorus in the silicon material by using a working curve obtained by using a silicon material whose concentration of silicon is known. In addition, regarding the silicon material, the luminous intensity of silicon is measured, and the concentration of the phosphorus in the silicon material is found by using a working curve which expresses a correlation between [the luminous intensity of the phosphorus/the luminous intensity of the silicon] (intensity ratio) obtained by using the silicon material whose concentration of silicon is known and the concentration of the silicon. Thereby, the analytical accuracy of a trace amount of phosphorus can be enhanced.;COPYRIGHT: (C)1999,JPO