首页> 外国专利> METHOD FOR FORMING SEMICONDUCTOR BARIUM TITANATE FILM, APPLICATION TO HEATER MIRROR MADE OF PTC THIN FILM LAYER, AND MANUFACTURE OF THE SAME

METHOD FOR FORMING SEMICONDUCTOR BARIUM TITANATE FILM, APPLICATION TO HEATER MIRROR MADE OF PTC THIN FILM LAYER, AND MANUFACTURE OF THE SAME

机译:钛酸钡薄膜的形成方法,在PTC薄膜层制热镜中的应用及其制造

摘要

PROBLEM TO BE SOLVED: To lower a heat treatment temperature, by carrying out heat treatment on the surface of a substrate with barium titanate fine particles provided between semiconductor barium titanate sintered particles. ;SOLUTION: In a method for manufacturing a positive thermal coefficient(PTC) heater mirror, a reflective film is formed on the back side of a transparent glass substrate, and a solution prepared by mixing semiconductor barium titanate sintered particles having a grain size exhibiting the PTC characteristic and a sol solution containing a barium titanate material component is applied on the surface of the reflective film and then dried. Next, the substrate is heat-treated at 600 to 800°C to precipitate barium titanate fine particles, and the semiconductor barium titanate sintered particles are connected with one another by providing the barium titanate fine particles between the semiconductor barium titanate sintered particles, thus forming a semiconductor barium film exhibiting the PTC characteristic on the surface of the reflective film. Next, lead wires are led out from both positive and negative electrodes formed as films on the semiconductor barium titanate film surface, and an insulating protective film is applied on the back side of the substrate so as to cover the semiconductor barium titanate film and both positive and negative electrodes.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:为了降低热处理温度,通过在半导体钛酸钡烧结颗粒之间设置有钛酸钡细颗粒对基板的表面进行热处理。 ;解决方案:在一种制造正热系数(PTC)加热镜的方法中,在透明玻璃基板的背面上形成反射膜,并通过混合具有以下尺寸的半导体钛酸钡烧结颗粒制成溶液:将PTC特性和包含钛酸钡材料成分的溶胶溶液施加到反射膜的表面上,然后干燥。接下来,在600至800℃下对基板进行热处理以沉淀钛酸钡细颗粒,并且通过在半导体钛酸钡烧结的颗粒之间设置钛酸钡细颗粒来使半导体钛酸钡烧结的颗粒彼此连接。在反射膜的表面上显示PTC特性的半导体钡膜。接着,从在钛酸钡薄膜表面上成膜的正负电极两者引出引线,并在基板的背面涂覆绝缘保护膜以覆盖半导体钛酸钡膜和正钛酸钡。和负极。;版权:(C)1999,日本特许厅

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