PURPOSE:To drastically enhance the crystallization yield of single crystal by immersing seed crystal in the melt of a raw material and thereafter slowly lowering the temp. of the melt by the specified conditions, and growing single crystal to a necessary shape and then starting pulling-up thereof. CONSTITUTION:A crucible 4 is provided to the inside of a high-pressure vessel 1 filled with inert gas 9 and holds both melt 13 for a raw material of a compound semiconductor and a liquid sealer 12 for covering the top face of this melt 13. After seed crystal 10 of the compound semiconductor is brought into contact with the top face of the melt 13, the seed crystal 10 is pulled up to the upper part. Thereby, single crystal is grown by slowly coagulating the melt 13. The following means are adopted in the above-mentioned method. In other words, after the seed crystal 10 is attached to the top face of the melt 13, the temp. thereof is lowered by 6-12 deg.C and crystal is grown on the seed crystal 10. Firstly, rotation of the crucible 4 is gradually increased without pulling up the seed crystal 10. The temp. in the center part of the melt 13 is lowered. After elapse of 0.5-2 minutes, furthermore, the temp. of the melt is slowly lowered at the lowering rate of -0.21 to-$0.88 deg.C/minute and crystal is grown in the lateral direction. At a point of time when crystal reaches a prescribed shape, the seed crystal 10 is pulled up at the specified pulling-up velocity.
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