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MASKS WITH LOW STRESS MULTILAYER FILMS AND A PROCESS FOR CONTROLLING THE STRESS OF MULTILAYER FILMS

机译:低应力多层膜的掩膜和多层膜的应力控制过程

摘要

A process for controlling the stress of multilayer films formed on a substrate is disclosed. A plurality of periods, each period having at least two layers of material wherein one of the layers of material is under compressive stress and the other layer of material is under tensile stress, are formed in a substrate. The stress in the multilayer film is controlled by selecting a thickness for the layer under compressive stress and a thickness for the layer under tensile stress that will provide a multilayer film of the desired stress. The thickness of each layer is about 0.5 nm to about 10 nm. Multilayer films with a stress of about -50 MPa to about 50 MPa are obtained using the present process. The present invention is also directed to masks with such multilayer films.
机译:公开了一种用于控制形成在基板上的多层膜的应力的方法。在衬底中形成多个周期,每个周期具有至少两层材料,其中一层材料处于压应力下,另一层材料处于拉应力下。通过选择压缩应力下的层的厚度和拉伸应力下的层的厚度来控制多层膜中的应力,所述厚度将提供期望应力的多层膜。每层的厚度为约0.5nm至约10nm。使用本方法获得具有约-50MPa至约50MPa的应力的多层膜。本发明还涉及具有这种多层膜的掩模。

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