Meteorological growth apparatus and meteorological growth method

摘要

Provided are a vapor phase growth apparatus and a vapor phase growth method capable of forming a favorable two-component or higher compound semiconductor thin film with few defects, high utilization efficiency of source gas, and high productivity. In the vapor phase growth apparatus and vapor phase growth method, at least two kinds of source gases are introduced in parallel with the surface of the substrate 11 provided in the reaction tube 10 to form a compound semiconductor thin film of two or more components on the surface of the substrate 11. It is about. This vapor phase growth apparatus includes a three-layer parallel structure of the first flow path 20, the second flow path 21, and the third flow path 22 in the reaction tube upstream of the substrate installation part of the reaction tube 11. In order to partition the flow path, partition plates 18 and 19 disposed in parallel with the surface of the substrate 11, the first gaseous growth gas introduction pipe 23 communicating with the first flow path 20, and the second flow path ( The second gaseous phase growth gas introduction tube 24 which is connected to the 21 and the growth promotion gas introduction tube 25 which is connected to the third flow path 22 are included.