CURRENT ACROSS THIN BASE REGION AND PROCESS OF FABRICATION THEREOF

摘要

The bipolar transistor has a base structure 31 in the space portion 25a on the single crystal silicon collector region 23a formed by the silicon oxide layer 25 and the base structure is an exogenous base formed around the single crystal silicon emitter region 32a. Intrinsic base layers 31a / 31b of monocrystalline silicon germanium having a reduced thickness from the center portion outward to reduce the dislocation due to thermal stress in the heat treatment for the layers 31c / 31d and the emitter regions 32a. Have.